Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces

Victor A. Petrov

doi:10.1117/12.304493

8 April 1998 Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces

Victor A. Petrov

Author Affiliations +

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304493
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

As is well known, lateral superlattices on semiconductor vicinal planes are realized in 2D electron systems on high-index Miller surfaces. In this work we suggest a new method of development of vicinal superlattices in quantum wires on semiconductor low-index surfaces. For this purpose we suggest to orient the axis of the wire at the necessary angles to the basic translation vectors on a low-index surface (for instance, in the MOS system with the use of a narrow gate). In this case in the quantum wire the new basic translation period along the axis of the wire A< < a0 (ao - lauice constant) appears. Keywords: quantum wire, vicinal superlattice, low-index surface, energetic spectrum, nünigaps.

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Victor A. Petrov "Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304493

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