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8 April 1998 Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors
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Abstract
Dark current nose measurements were carried out between 10 and 104 Hz at T equals 80K on two InGaAs/InP quantum well IR photo detectors (QWIPs) designed for 8 micrometers IR detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependent gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5V bias and detectivity of 5 X 10$_11) cm (root) Hz/W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T equals 80K.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Louis Jelen, Steven Slivken, Thibaut David, Gail J. Brown, and Manijeh Razeghi "Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304470
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