8 April 1998 Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy
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Abstract
We have investigated the selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy. Particularly, we report on selectivity formed InxGa1-xAs QDs on the GaAs(100) substrate with fine- patterned oxide layers such as gallium oxide and silicon oxide, which are prepared with electron bema lithography technique. The electron beam lithography pre-patterned oxide layers were used to assemble the dots in a specific region. Both of the oxide layers served as mask materials were compared for the better selective growth of self-assembled QDs. The migration and the desorption of the In and Ga adatoms on the oxide layers are considered to be the most important factors for the selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy. The influences of the mole fractions of indium, the growth temperature and the growth interruption times on the morphological transformation from 2D to 3D structures were discussed. Particularly, the 2D arrays of quantum dots selectively formed on GaAs substrates with pre-patterned Ga2O3 oxide layer may eventually be used for novel electronic or optical devices.
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Yong Ju Park, Yong Ju Park, Cheol Koo Hahn, Cheol Koo Hahn, Kwang Mu Kim, Kwang Mu Kim, Suk Koo Jung, Suk Koo Jung, Eun Kyu Kim, Eun Kyu Kim, Suk-Ki Min, Suk-Ki Min, } "Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304494; https://doi.org/10.1117/12.304494
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