8 April 1998 Silicon JFETs for cryogenic applications
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A process for fabrication of low-frequency, low-noise, low- power silicon JFETs for cryogenic operation has been developed. COmmercially available silicon JFETs exhibit very high low frequency and 1/f noise at liquid nitrogen temperature. We report on process optimization and effect of high temperature oxidation and drive-in process on noise performance of these devices. These silicon JFETs were designed for operation at 77K. In this paper, we report the noise performance and its relation to the well-known complex oxygen-vacancy. A center that has a trap level of 0.18 eV below the conduction band. These devices were developed for use in the photo-diode assembly of NASAs Gravity Probe B mission telescope.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naresh C. Das, Sachidananda Babu, and Murzy D. Jhabvala "Silicon JFETs for cryogenic applications", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304475; https://doi.org/10.1117/12.304475

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