8 April 1998 The Bi/Bi1-xSbx multiquantum well structure
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Abstract
Bi/Bi1-xSbx multiquantum well structure has been grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with a buffer layer of CdTe (111). The GaAs substrate was preheated at a temperature of 580 degrees C in the MBE chamber with vacuum of 10+10 torr for 10 minutes. The CdTe (111) buffer layer was grown with thickness of 300 nm at temperature of 280 degrees C. The Bi/Bi1-xSbx multilayer structure with x of 0.15, repeated 40 times, was grown at substrate temperature of 130 degrees C. As- deposited samples were characterized by reflection high- energy electron diffraction, x-ray diffraction analysis and high-resolution transmission electron microscopy (TEM), indicating a good epitaxial layer quality. The energy band model of the samples have been suggested for the first time.
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Xinjian Yi, Xinjian Yi, Xinyu Zhang, Xinyu Zhang, Yi Li, Yi Li, Jianhua Hao, Jianhua Hao, Xing-Rong Zhao, Xing-Rong Zhao, } "The Bi/Bi1-xSbx multiquantum well structure", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304472; https://doi.org/10.1117/12.304472
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