8 April 1998 The Bi/Bi1-xSbx multiquantum well structure
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Bi/Bi1-xSbx multiquantum well structure has been grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with a buffer layer of CdTe (111). The GaAs substrate was preheated at a temperature of 580 degrees C in the MBE chamber with vacuum of 10+10 torr for 10 minutes. The CdTe (111) buffer layer was grown with thickness of 300 nm at temperature of 280 degrees C. The Bi/Bi1-xSbx multilayer structure with x of 0.15, repeated 40 times, was grown at substrate temperature of 130 degrees C. As- deposited samples were characterized by reflection high- energy electron diffraction, x-ray diffraction analysis and high-resolution transmission electron microscopy (TEM), indicating a good epitaxial layer quality. The energy band model of the samples have been suggested for the first time.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinjian Yi, Xinjian Yi, Xinyu Zhang, Xinyu Zhang, Yi Li, Yi Li, Jianhua Hao, Jianhua Hao, Xing-Rong Zhao, Xing-Rong Zhao, } "The Bi/Bi1-xSbx multiquantum well structure", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304472; https://doi.org/10.1117/12.304472

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