5 May 1998 New method for grafting a thin film metal-semiconductor-metal photodetector with a transimpedence amplifier and applications to multichip module packaging
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Abstract
Arrays of interdigitated metal-semiconductor-metal photodetectors carried on thin semiconductor membranes have been transferred and grafted by epitaxial liftoff techniques to non-conducting AlN host substrates for advanced multichip module development purposes. Progress includes the introduction of full surface passivation by thin polyimide films resulting in dramatically reduced dark currents for GaAs photodetectors. Device modeling by means of a computer simulation has suggested new interdigitated electrode configurations which can only be applied to these types of devices carried on thin film membranes. Integration of InGaAs photodetector devices on the same host substrate with transimpedance amplifiers provides an intermediate development prototype of the first stage of a high speed multichip module receiver product for fiber optic telecommunications applications. The use of integrated circuit-sized membranes to carry small discrete devices, broad-area inverted photodetectors, OEICs, focal plane arrays, and multi-spectral sensors continues to provide a manageable path to automated packaging using commercial off-the-shelf hardware.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles B. Morrison, Zheng Zhu, Joel Steinberg, Andreas P. Glinz, James H. Bechtel, "New method for grafting a thin film metal-semiconductor-metal photodetector with a transimpedence amplifier and applications to multichip module packaging", Proc. SPIE 3288, Optoelectronic Interconnects V, (5 May 1998); doi: 10.1117/12.307585; https://doi.org/10.1117/12.307585
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