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22 December 1997 Edge-emitting quantum well laser with integrated intracavity electrostatic gate
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Ridge waveguide, edge-emitting single quantum well GaAs lasers with an integrated gating electrode have been fabricated. These devices integrate a MESFET structure with the laser PN junction so that the SBD (Schottky barrier diode) depletion layer can be used for transverse current confinement in the laser. Device fabrication was very simple requiring only an anisotropic etch for waveguide definition followed by a single self-aligned contact deposition step. The Schottky barrier depletion layers on either side of the ridge waveguide act to confine free carriers. This structure allows for separation of the optical and electrical confinement in the transverse direction without requiring complex fabrication. The device demonstrated modulation of the pulsed lasing threshold with gate control voltage on a 30 micron wide ridge. Above threshold, increasing power output with increasing gate voltage was demonstrated with negligible gate current. The multimode lasing spectrum showed that the increased power output occurred for all modes with no shift in the mode wavelengths to within the resolution of the measurement system.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Reginald K. Lee, Yuan Jian Xu, John D. O'Brien, Oskar J. Painter, Axel Scherer, and Amnon Yariv "Edge-emitting quantum well laser with integrated intracavity electrostatic gate", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997);

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