22 December 1997 Electroabsorption multiple quantum well modulators for high-frequency applications
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Abstract
External modulation of cw laser radiation by multiple quantum well electroabsorption modulators will potentially play an important role in rf photonic links, especially at high microwave frequencies and millimeter waves. InAsP/GaInP MQW on InP and GaInAs/InAlAs MQW on GaAs modulators have been grown by MBE and fabricated into p-i-n modulators. Performance with -26 dB link efficiency without amplification, 5 dB insertion loss, 15 mW of optical power and 17 GHz bandwidth has been experimentally demonstrated. Extension to 100 GHz bandwidth with -39 dB link efficiency (without amplification) can be expected. Traveling wave modulators and on-chip impedance matching of p-i-n modulators have been designed, fabricated and evaluated. Traveling wave modulators with flat frequency response over 40 GHz have been experimentally demonstrated.
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William S. C. Chang, William S. C. Chang, Kwok Kwong Loi, Kwok Kwong Loi, Hsin Hsing Liao, Hsin Hsing Liao, Justin Hannah Hodiak, Justin Hannah Hodiak, Paul K. L. Yu, Paul K. L. Yu, Peter M. Asbeck, Peter M. Asbeck, } "Electroabsorption multiple quantum well modulators for high-frequency applications", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298235; https://doi.org/10.1117/12.298235
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