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22 December 1997 Fabrication of low-loss GaAs/AlGaAs Mach Zehnder modulators using proton isolation
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Opto-electronic devices offer a wide-band, low power, compact solution to a variety of functional requirements in both military and civilian systems. The applications include switching and modulation for telecommunications, microwave and mm wave radar and electronic warfare. The integration of opto-electronic devices on to waveguides promises the benefit of increased functionality and reduced cost systems. A key requirement of such integration is that devices be electrically isolated from each other but remain optically connected. This isolation may be achieved by etching a notch through the top conducting layer of a p-i-n structure, for example using reactive ion etching. This can be problematical owing to the need to control etch depths to high precision. We have developed a process for isolating hard walled AlGaAs/GaAs waveguides using proton implantation. The effect of the proton energy and the level and type of doping on the degree of isolation and transparency achievable have been investigated. Post implantation annealing has been found to have a significant effect. We have found that our process does not significantly alter the transparency of the waveguides and gives excellent electrical isolation. In contrast to the etched notch method our process also gives very good yield. Using this technique MachZehnder (MZ) modulators have successfully been fabricated and demonstrated. Keywords: Optoelectronics, proton isolation, waveguides, integration.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michelle M. Bourke, John M. Heaton, Chris D. Watson, Brian H. Smith, Keith P. Hilton, David R. Wight, Edward Chidley, and Donald McGillivray "Fabrication of low-loss GaAs/AlGaAs Mach Zehnder modulators using proton isolation", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997);


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