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22 December 1997 GaInP/GaP quantum dots: a material for OEIC on silicon substrates
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Abstract
Realization of optoelectronic integrated circuits on silicon substrates has many difficulties, one of which is depositing high quality light-emitting material on the silicon surface. A desirable depositing method from a manufacturing point of view is chemical vapor deposition. Because there are currently no light emitting semiconductor alloys lattice-matched to silicon, epitaxial growth of III-V compound devices on Si has required a lattice constant engineering step such as wafer bonding or thick buffer layer growth. Growth of GaInP/GaP strain-induced quantum dots offers an opportunity to grow single crystal light-emitting devices monolithically on silicon substrates without lattice constant engineering steps, since single crystal GaP can be grown on silicon. In this presentation, progress on MOCVD growth of GaInP/GaP quantum dots and its device applications are reviewed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jong Won Lee, Alfred T. Schremer, James R. Shealy, and Joseph M. Ballantyne "GaInP/GaP quantum dots: a material for OEIC on silicon substrates", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); https://doi.org/10.1117/12.298246
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