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22 December 1997 Integrated photonic devices by selective-area MOCVD
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Abstract
Progress towards integrated photonic devices by three-step selective-area MOCVD is reviewed. Using the selective growth process, the quantum well thickness and, hence, the emission wavelength of buried heterostructure devices can be defined anywhere on a wafer surface by using an appropriate mask geometry for the active region regrowth. This in-plane bandgap energy control allows the designer to fabricate devices with different wavelengths on the same wafer for integrated photonic applications. Since no growth occurs on the oxide mask, the spacing between stripes defines the width of the lateral waveguide, and the width of the stripes defines the amount of growth rate and composition enhancement in the quantum well. As a result, a very wide range of emission wavelengths (960 - 1060 nm) can be obtained over the wafer surface in a single growth. This paper reviews a few of the high performance photonic devices fabricated using this method.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark L. Osowski and James J. Coleman "Integrated photonic devices by selective-area MOCVD", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); https://doi.org/10.1117/12.298236
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