Long-wavelength triangular ring laser for monolithic integration

Chen Ji; Michael H. Leary; Joseph M. Ballantyne

doi:10.1117/12.298229

22 December 1997 Long-wavelength triangular ring laser for monolithic integration

Chen Ji, Michael H. Leary, Joseph M. Ballantyne

Proceedings Volume 3290, Optoelectronic Integrated Circuits II; (1997) https://doi.org/10.1117/12.298229
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report the fabrication and testing of long wavelength triangular ring lasers operating at 1.26 micrometer. The triangular ring laser, fabricated in InGaAsP/InP, employs a ridge waveguide structure with the ridge and facets dry etched using high temperature CAIBE. Pulsed L-I, spectra and output characteristics are analyzed. Preliminary testing is done for ring lasers monolithically integrated with tapered amplifier. Temperature characteristics are studied by cooling the ring lasers with a TE cooler. Further work on noise characteristics require the use of optical isolator to reduce feedback from the optical fiber used in the measurement setup.

Citation Download Citation

Chen Ji, Michael H. Leary, and Joseph M. Ballantyne "Long-wavelength triangular ring laser for monolithic integration", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); https://doi.org/10.1117/12.298229

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