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22 December 1997 Self-pulsations, bistability, and intracavity quantum well absorber modulation of VCSELs
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We have constructed a novel VCSEL structure in which a voltage biased quantum well absorber is embedded in the mirror stack. Several applications for these devices are demonstrated. The devices exhibit regimes of negative differential resistance in the absorber under varying laser bias conditions. By choosing the absorber bias conditions such that the operating load line intersects the absorber IV trace three times, the laser can be made to exhibit optical bistability. The magnitude of the bistability and consequent hysteresis loop can be controlled by adjusting the absorber bias. If the bias conditions are adjusted so that the load line is tangential to the portion of the absorber IV exhibiting negative differential resistance, then the device can be made to self-pulsate. Self-pulsations at frequencies as high as 2 GHz with 700 kHz rf linewidth FWHM (full-width at half-maximum) have been obtained using these devices. Furthermore, the self-pulsation frequency can be tuned over 700 MHz by adjusting the bias conditions, representing a substantial advance over existing self- pulsating VCSELs. We have also demonstrated a novel modulation scheme using these devices, in which the drive signal is applied to the bias voltage across the absorber. Theoretical analysis of the chirping mechanism leads us to expect that this technique will minimize the chirp at high modulation frequencies, while still providing substantial modulation depth and high speeds. We achieved a minus 3 dB bandwidth of 9 GHz; the bandwidth increases with the laser bias current at a rate of 7 GHz/(root)mA.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Janice A. Hudgings, Sui F. Lim, Gabriel S. Li, Wupen Yuen, Kam Y. Lau, and Constance J. Chang-Hasnain "Self-pulsations, bistability, and intracavity quantum well absorber modulation of VCSELs", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997);

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