26 March 1998 Image formation properties of As40S20Se40 thin layers
Author Affiliations +
The present paper is concerned with investigations of image formation properties of As40S20Se40 thin layers. Spectral dependence of the refraction index n of variously treated samples was estimated from optical transmission in the spectral region 400-2500 nm. The n energy dependence of variously treated samples was fitted by the Wemple- DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally- induced structural changes, which were directly confirmed by Raman scattering measurements. Such photoinduced structural changes provide good etching selectivity of As40S20Se40 layers in nonaqueous amine based solvents. The best obtained sensitivity values consisted of approximately 40 cm2/J. Surface relief patterns that were fabricated have good surface quality.Diffraction efficiency values of holographic diffraction gratings obtained on the base of As40S20Se40 layers consisted of 60-70 percent.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Stronski, Miroslav Vlcek, A. Sklenar, Peter E. Shepeljavi, Pavel F. Oleksenko, and Tomas Wagner "Image formation properties of As40S20Se40 thin layers", Proc. SPIE 3294, Holographic Materials IV, (26 March 1998); doi: 10.1117/12.304529; https://doi.org/10.1117/12.304529


Back to Top