Life characteristics of an EB-CCD incorporating a full frame transfer CCD have been evaluated. Applying -8kV to the photocathode, the accelerated life test corresponding to 3,500 hours of operation was carried out. As the result, there are no degradation of the photocathode sensitivity and the gain. However, an offset is increased linearly proportional to the operation period, including the upper and lower of the irradiated area. The increment after the life test is approximately 700 at 20 degree centigrade with a multi-pinned phase (MPP) operation. From the comparison between the MP and the non-MPP operation of the CCD, the original of the offset is concluded to be the increased dark current (DC) from the Si-SiO2 interface, which is damaged by the Bremsstrahlung x-ray. The DC slightly affects the signal as the offset when positive voltage to gate electrodes depletes the Si-SiO2 interface during the vertical transfer. The DC does not affect the signal at all with the MPP operation in the exposure time. The lifetime of the EB-CCD is calculated to be much longer than 10,000 hours, if the lifetime is defined by the period that the DC fulfills the half of the full well capacity.