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1 April 1998 Quantum efficiency of x-ray CCDs
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Proceedings Volume 3301, Solid State Sensor Arrays: Development and Applications II; (1998)
Event: Photonics West '98 Electronic Imaging, 1998, San Jose, CA, United States
We have performed precise measurements of x-ray absorption constants for all the thin films comprising CCD gate structure, namely, phosphorous doped polysilicon, silicon dioxide, and silicon nitride. X-ray absorption of these films shows large oscillations around the corresponding absorption edges: nitrogen K, oxygen K, silicon L and K. As a result, quantum efficiency of a CCD in the soft x-ray range deviates significantly from the generally assumed simple model predictions. In order to cover the range of energies from 60 eV to 3000 eV transmission measurements were performed at several synchrotron beamlines at ALS, PTB BESSY, SRC. A model of the CCD response with near edge x-ray absorption structure taken into account predicts a very complicated shape of the energy dependence of the quantum efficiency around silicon and oxygen absorption edges. Experimental measurements of CCD quantum efficiency relative to a calibrated detector were performed at BESSY for both frontside illuminated and backside illuminated CCDs for energies around the oxygen absorption edge. Experimental results were found to be in a good agreement with our model.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory Y. Prigozhin, Jonathan W. Woo, James A. Gregory, Andrew H. Loomis, Mark W. Bautz, George R. Ricker Jr., and Stefan Kraft "Quantum efficiency of x-ray CCDs", Proc. SPIE 3301, Solid State Sensor Arrays: Development and Applications II, (1 April 1998);


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