Paper
1 January 1998 Influence of dielectric layer (MgF2) on optical properties of Mn film
Piotr Bieganski, E. Dobierzewska-Mozrzymas, E. Pieciul, Jacek Wojcik
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Proceedings Volume 3320, Tenth Polish-Czech-Slovak Optical Conference: Wave and Quantum Aspects of Contemporary Optics; (1998) https://doi.org/10.1117/12.301348
Event: Tenth Polish-Czech-Slovak Optical Conference: Wave and Quantum Aspects of Contemporary Optics, 1996, Karpacz, Poland
Abstract
On the basis of the previous structural and electrical examinations it has been found that thin, especially discontinuous Mn films even under vacuum conditions are quickly oxidized. In order to protect from this process just after evaporation of Mn films, its were in vacuo covered with MgF2 layers. The influence of MgF2 dielectric layers with thickness dd approximately equals 21 nm on the optical properties of Mn films was investigated. The thicknesses of Mn films varied from 4 to 32 nm. Optical properties of double films (Mn + MgF2) differ distinctly from those of single Mn-films. Dielectric layers with thickness dd approximately equals 21 nm protect from oxidation process and cause an increase of reflection coefficients and decrease of transmission coefficients in the visible and infrared range.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr Bieganski, E. Dobierzewska-Mozrzymas, E. Pieciul, and Jacek Wojcik "Influence of dielectric layer (MgF2) on optical properties of Mn film", Proc. SPIE 3320, Tenth Polish-Czech-Slovak Optical Conference: Wave and Quantum Aspects of Contemporary Optics, (1 January 1998); https://doi.org/10.1117/12.301348
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KEYWORDS
Manganese

Dielectrics

Optical properties

Magnesium fluoride

Reflectivity

Oxidation

Transmittance

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