16 April 1998 Optimization of stress in LPCVD polysilicon films for MEMS applications
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Proceedings Volume 3321, 1996 Symposium on Smart Materials, Structures, and MEMS; (1998); doi: 10.1117/12.305590
Event: Smart Materials, Structures and MEMS, 1996, Bangalore, India
Abstract
The influence of LPCVD process parameters on stress in polysilicon films has been investigated for surface micromachined structures. The as deposited films show a large strain which can be considerably reduced by post deposition annealing. The polycrystalline film deposited at 605 degree(s)C and 250 mTorr is found to have minimum residual stress. The rapid thermal annealing (RTA) at 1100 degree(s)C for 30 sec relieves the stress completely. Further, the RTA is shown to be a superior process compared to the conventional furnace annealing for obtaining stress free films.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Janak Singh, Ami Chand, Sudhir Chandra, "Optimization of stress in LPCVD polysilicon films for MEMS applications", Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); doi: 10.1117/12.305590; https://doi.org/10.1117/12.305590
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KEYWORDS
Low pressure chemical vapor deposition

Annealing

Microelectromechanical systems

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