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20 July 1998 High-etch-rate deep anisotropic plasma etching of silicon for MEMS fabrication
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Abstract
MEMS fabrication faces multiple technological challenges before it can become a commercially viable technology. One key fabrication process required is the deep silicon etching for forming high aspect ratio structures. There is an increasing interest in the use of dry plasma etching for this application because of its anisotropic (i.e. independent of silicon crystal orientation) etching behavior, high etch rate, and its compatibility with traditional IC processing. Alcatel has developed a patented inductively coupled high density plasma source which delivers high etch rate, uniform, anisotropic silicon etching to depths as deep as 500 micrometers . This plasma source has been used for fabricating devices such as accelerometers, yaw rate sensors etc. Etch process performance data on some of these devices will be presented. Thus the Alcatel deep etching system provides the enabling technology requires for deep silicon micromachining of microsensors.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tam Pandhumsoporn, Lei Wang, Michael Feldbaum, Prashant Gadgil, Michel Puech, and Philippe Maquin "High-etch-rate deep anisotropic plasma etching of silicon for MEMS fabrication", Proc. SPIE 3328, Smart Structures and Materials 1998: Smart Electronics and MEMS, (20 July 1998); https://doi.org/10.1117/12.320159
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