5 June 1998 ACLV control in x-ray lithography
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Abstract
In this paper, dimensional control of critical features in proximity x-ray lithography is discussed. CD error components attributed to x-ray mask, proximity exposure and resist process are identified. Analysis of linewidth control data at 180 nm and 150 nm ground rules for synchrotron based x-ray proximity lithography is presented. Data have been collected at IBM Advanced Lithography Facility equipped with x-ray stepper built by SVGL and Helios synchrotron radiation x-ray source.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Azalia A. Krasnoperova, Robert P. Rippstein, Denise M. Puisto, Janet M. Rocque, "ACLV control in x-ray lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309568; https://doi.org/10.1117/12.309568
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