5 June 1998 ACLV control in x-ray lithography
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Abstract
In this paper, dimensional control of critical features in proximity x-ray lithography is discussed. CD error components attributed to x-ray mask, proximity exposure and resist process are identified. Analysis of linewidth control data at 180 nm and 150 nm ground rules for synchrotron based x-ray proximity lithography is presented. Data have been collected at IBM Advanced Lithography Facility equipped with x-ray stepper built by SVGL and Helios synchrotron radiation x-ray source.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Azalia A. Krasnoperova, Azalia A. Krasnoperova, Robert P. Rippstein, Robert P. Rippstein, Denise M. Puisto, Denise M. Puisto, Janet M. Rocque, Janet M. Rocque, } "ACLV control in x-ray lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309568; https://doi.org/10.1117/12.309568
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