5 June 1998 Application of fullerene C60 thin films as an electron-beam resist for micro- and nanolithography
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The paper presents the attempt of the use of the C60 thin films as a negative electron beam resist. A comparative study of C60 films polymerized by the He-Cd laser and electron beam is made. It is shown that under the exposure by laser irradiation of 2.8 eV polymerization begins from 104 and saturates at 105 photons per fullerene molecule, whereas total polymerization under the electron beam requires the dose of 0.1 C/cm2. Laser irradiated films obtained both in air and vacuum have porous structure with void fraction of 0.30 and 0.55 correspondingly and act as a host lattice for intercalated oxygen. Films polymerized by electron beam show higher polymerization degree as evidenced by ellipsometric measurements and Raman spectra. The research conducted shows that the fullerene material is to be a promising resist for the micro- and nano-pattern manufacturing.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael E. Gaevski, Michael E. Gaevski, Lolita G. Rotkina, Lolita G. Rotkina, Tatjana L. Makarova, Tatjana L. Makarova, Alexander V. Lunev, Alexander V. Lunev, Ilja P. Soshnikov, Ilja P. Soshnikov, } "Application of fullerene C60 thin films as an electron-beam resist for micro- and nanolithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309594; https://doi.org/10.1117/12.309594

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