Application of fullerene C60 thin films as an electron-beam resist for micro- and nanolithography

Michael E. Gaevski; Lolita G. Rotkina; Tatjana L. Makarova; Alexander V. Lunev; Ilja P. Soshnikov

doi:10.1117/12.309594

5 June 1998 Application of fullerene C₆₀ thin films as an electron-beam resist for micro- and nanolithography

Michael E. Gaevski, Lolita G. Rotkina, Tatjana L. Makarova, Alexander V. Lunev, Ilja P. Soshnikov

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309594
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The paper presents the attempt of the use of the C₆₀ thin films as a negative electron beam resist. A comparative study of C₆₀ films polymerized by the He-Cd laser and electron beam is made. It is shown that under the exposure by laser irradiation of 2.8 eV polymerization begins from 10⁴ and saturates at 10⁵ photons per fullerene molecule, whereas total polymerization under the electron beam requires the dose of 0.1 C/cm². Laser irradiated films obtained both in air and vacuum have porous structure with void fraction of 0.30 and 0.55 correspondingly and act as a host lattice for intercalated oxygen. Films polymerized by electron beam show higher polymerization degree as evidenced by ellipsometric measurements and Raman spectra. The research conducted shows that the fullerene material is to be a promising resist for the micro- and nano-pattern manufacturing.

Citation Download Citation

Michael E. Gaevski, Lolita G. Rotkina, Tatjana L. Makarova, Alexander V. Lunev, and Ilja P. Soshnikov "Application of fullerene C₆₀ thin films as an electron-beam resist for micro- and nanolithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309594

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