Conducting electron-beam resists based on polyaniline

Maggie A. Z. Hupcey; Marie Angelopoulos; Jeffrey D. Gelorme; Christopher Kemper Ober

doi:10.1117/12.309592

5 June 1998 Conducting electron-beam resists based on polyaniline

Maggie A. Z. Hupcey, Marie Angelopoulos, Jeffrey D. Gelorme, Christopher Kemper Ober

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309592
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Conducting resists have a number of potential applications in microlithography (1). For example, during electron beam (e-beam) exposure of insulating materials, pat tern distortions and displacements are observed due to charging ofthe surface. In addition, charging results in alignment errors from one level oflithography to another. Charging is also a problem in SEM metrology ofmasks or resists. Conducting polymers have been shown to function as effective discharge layers when applied as coatings either above or below the imaging resist or on the surface ofa mask (1-3). Resists have also been developed based on conducting polymers (1,3-5). However, the overall lithographic perform ance ofthese systems has not been competitive with conventional resists. Polyaniline has been one ofthe preferred conducting polymers for these applications because it combines high solubility, ease of synthesis, and a great deal of chemical versatility. Previously, we reported on a new family ofwater based polyaniline denvatives which form excellent dissipative coatings. We also reported on conducting resists based on these systems (3). In this paper, we report on a new negative tone resist, PAM WM. This is based on functionalization of a hydroxysubstituted polyaniline with methacrylate side groups.

Citation Download Citation

Maggie A. Z. Hupcey, Marie Angelopoulos, Jeffrey D. Gelorme, and Christopher Kemper Ober "Conducting electron-beam resists based on polyaniline", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309592

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