Development of a next-generation e-beam lithography system for 1-Gb DRAM masks

Tadashi Komagata; Yasutoshi Nakagawa; Hitoshi Takemura; Nobuo Gotoh; Kazumitsu Tanaka

doi:10.1117/12.309585

5 June 1998 Development of a next-generation e-beam lithography system for 1-Gb DRAM masks

Tadashi Komagata, Yasutoshi Nakagawa, Hitoshi Takemura, Nobuo Gotoh, Kazumitsu Tanaka

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309585
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A new electron beam lithography system for masks needed in production of 1Gbit DRAM devices was developed and evaluated. The system features a variable shaped beam, 50 kV accelerating voltage, and a step and repeat stage, and incorporates new technologies, including a high resolution high current density electron optical system, a per-shot beam correction unit, a high precision beam detection system utilizing the curve fitting method, and a single-stage 20 bit beam deflection unit. The system achieves a minimum linewidth of 200 nm or less, pattern uniformity of 20 nm within field, and a positional accuracy, including field stitching accuracy, of 20nm within a field, resulting in an exposure speed at least 5 times faster than the existing model, the JBX-7000MVII.

Citation Download Citation

Tadashi Komagata, Yasutoshi Nakagawa, Hitoshi Takemura, Nobuo Gotoh, and Kazumitsu Tanaka "Development of a next-generation e-beam lithography system for 1-Gb DRAM masks", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309585

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