5 June 1998 EUV optical design for a 100-nm CD imaging system
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Abstract
The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel those of other optical lithographies. Specifications are scaled to reflect the 100 nm critical dimension for the first generation EUVL systems. The design being fabricated for the Engineering Test Stand, an EUVL alpha tool, consists of a condenser with six channels to provide an effective partial coherence factor of 0.7. The camera contains four mirrors; three of the mirrors are aspheres and the fourth is spherical. The design of the optical package has been constrained so that the angles of incidence and the variations in the angle of incidence of all rays allow for uniform multilayer coatings. The multilayers introduce a slight shift in image position and magnification. We have shown that a system aligned with visible light is also aligned at 13.4 nm. Each mirror must be fabricated with an RMS figure error of less than 0.25 nm and better than 0.2 nm RMS roughness. Optical surfaces that exceed each of these specifications individually have been fabricated. The success of EUVL requires that these specifications be met simultaneously. Keywords: EUV projection lithography, optical design, multilayer coatings, aspheric optics
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald W. Sweeney, Russell M. Hudyma, Henry N. Chapman, David Shafer, "EUV optical design for a 100-nm CD imaging system", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309559; https://doi.org/10.1117/12.309559
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