5 June 1998 Electron-beam lithography on multilayer substrates: experimental and theoretical study
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A fast simulator for electron beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. This method has been proved much faster than Monte Carlo. All important phenomena are included in the calculation. Additionally, the reaction/diffusion effects occurring during post exposure bake in the case of chemically amplified resists are taken into account. The result obtained by the simulation are compared successfully with experimental and other simulation results for conventional and chemically amplified resists. The case of substrates consisting of more than one layer is considered in depth as being of great importance in electron beam patterning. By using SELID, it is possible to forecast the resist profile with considerable accuracy for a wide range of resists, substrates and energies. Additionally, proximity effect parameters are extracted easily for use in any proximity correction package.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ioannis Raptis, Giancarlo Meneghini, Anja Rosenbusch, Nikos Glezos, Rafaelle Palumbo, Marco Ardito, Leonardo Scopa, George P. Patsis, Evangelos Valamontes, Panagiotis Argitis, "Electron-beam lithography on multilayer substrates: experimental and theoretical study", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309597; https://doi.org/10.1117/12.309597

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