5 June 1998 Extension of the traditional optical model for investigation into EUV projection lithography capabilities
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Abstract
A traditional aerial image model has been used to demonstrate a good applicability of 13nm EUV projection lithography to printing sub-0.1mm features. To estimate the potential of a possible candidate for EUV optics--a two- mirror projection system, we investigated the issues of aerial image formation by the reflective optics with account for aberrations. We have developed a simplified method to determine the optical parameters of the ring-field system that minimize aberrations of the 3rd order and, partially, of the 5th. As a result, we have found that the uncompensated aberrations contribute to a sharply asymmetrical impulse response of the ring-field projection system, where the characteristic width of the impulse response in some directions might be two times larger than the diffraction limit.
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Vladimir V. Ivin, Vladimir V. Ivin, Kevin D. Lucas, Kevin D. Lucas, Tariel M. Makhviladze, Tariel M. Makhviladze, Vadim V. Manuylov, Vadim V. Manuylov, Marina G. Medvedeva, Marina G. Medvedeva, } "Extension of the traditional optical model for investigation into EUV projection lithography capabilities", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309628; https://doi.org/10.1117/12.309628
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