5 June 1998 Novel x-ray mask structure with low out-of-plane distortion
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During the process of an x-ray mask, anodic bonding makes the wafer to be distorted largely because of the difference between thermal coefficient of a wafer and Pyrex. A novel structure which has an additional wafer on the lower surface of Pyrex was suggested to reduce x-ray mask OPD and the case calculations have been made in this paper. For the structure used in this study, the x-ray mask OPD of the suggested structure was 4.456 micrometers . The effect of the additional wafer inner radius on the x-ray mask OPD was also presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young Jin Jeon, Young Jin Jeon, Sang-Soo Choi, Sang-Soo Choi, Il Yong Kim, Il Yong Kim, Hai Bin Chung, Hai Bin Chung, Bo Woo Kim, Bo Woo Kim, } "Novel x-ray mask structure with low out-of-plane distortion", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309607; https://doi.org/10.1117/12.309607


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