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5 June 1998 Performance limitations from Coulomb interaction in maskless parallel electron-beam lithography systems
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Abstract
Proposed high throughput maskless multi-parallel electron beam systems require a large current, which can also potentially destroy the imaging quality due to Coulomb interaction effects. By using a Monte Carlo approach, we have studied the beam current limitation set by Coulomb interaction among electrons at 0.1 micrometers resolution under a variety of column lengths and acceleration voltages for both a blanker aperture array system and a photocathode system. By taking into account the limits from the resist sensitivity and the freedom of system parameter selection, the throughput performance is evaluated in terms of an upper limit and a lower limit, and the feasible system configurations are suggested for achieving the desired throughput as well as 0.1 micrometers resolution. Some results for SCALPEL are also obtained, and the comparison of different lithography tools are discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liqun Han, Mark A. McCord, Gil Israel Winograd, and Roger Fabian W. Pease "Performance limitations from Coulomb interaction in maskless parallel electron-beam lithography systems", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309583
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