Scaling behavior in interference lithography

Rodney R. Agayan; William C. Banyai; Andres J. Fernandez

doi:10.1117/12.309630

5 June 1998 Scaling behavior in interference lithography

Rodney R. Agayan, William C. Banyai, Andres J. Fernandez

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309630
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Interference lithography is an emerging technology that provides a means for achieving high resolution over large exposure areas with virtually unlimited depth of field. 1D and 2D arrays of deep submicron structures can be created using near i-line wavelengths and standard resist processing. In this paper, we report on recent advances in the development of this technology, focusing in particular, on how exposure latitude and resist profile scale with interference period. We present structure width vs. dose curves for periods ranging from 200 nm to 1.0 micrometers , demonstrating that deep submicron structures can be generated with exposure latitudes exceeding 30 percent. Our experimental results are compared to simulations based on PROLITH/2.

Citation Download Citation

Rodney R. Agayan, William C. Banyai, and Andres J. Fernandez "Scaling behavior in interference lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309630

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