5 June 1998 Scaling behavior in interference lithography
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Abstract
Interference lithography is an emerging technology that provides a means for achieving high resolution over large exposure areas with virtually unlimited depth of field. 1D and 2D arrays of deep submicron structures can be created using near i-line wavelengths and standard resist processing. In this paper, we report on recent advances in the development of this technology, focusing in particular, on how exposure latitude and resist profile scale with interference period. We present structure width vs. dose curves for periods ranging from 200 nm to 1.0 micrometers , demonstrating that deep submicron structures can be generated with exposure latitudes exceeding 30 percent. Our experimental results are compared to simulations based on PROLITH/2.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rodney R. Agayan, William C. Banyai, Andres J. Fernandez, "Scaling behavior in interference lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309630; https://doi.org/10.1117/12.309630
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