5 June 1998 Three-aspherical-mirror system for EUV lithography
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Abstract
In order to investigate industrial applications of synchrotron radiation, Hyogo Prefecture is constructing a synchrotron radiation (SR) ring at the SPring-8 site. It will operate at an electron energy of 1.5 GeV. In September, 1998, the ring will be commissioned when the SPring-8 injector begins feeding electrons into it. We developed a beam line for EUVL under the industrial applications program. In addition, we are developing a three-spherical- mirror system for EUVL. The specifications of the exposure tool target the 0.1-micrometers generation on the SIA road map. This tool consists of illumination optics, a scanning and alignment mechanism, 3-aspherical-mirror optics, and a load- lock chamber for exchanging wafers. The exposure tool is installed in a thermal chamber located at the end of the beamline. Using this system, we plan to develop a 0.1-micrometers process and fabricate MOS devices with feature sizes of 0.1- micrometers and below.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroo Kinoshita, Takeo Watanabe, Masahito Niibe, Masaaki Ito, H. Oizumi, Hiromasa Yamanashi, Katsuhiko Murakami, Tetsuya Oshino, Yuriy Ya. Platonov, Nicola Grupido, "Three-aspherical-mirror system for EUV lithography", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309580; https://doi.org/10.1117/12.309580
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KEYWORDS
Semiconducting wafers

Photomasks

Wafer-level optics

Optical alignment

Mirrors

Extreme ultraviolet lithography

Synchrotron radiation

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