X ray fills the gap

Chet Wasik; G. P. Murphy; Alek C. Chen; Azalia A. Krasnoperova; Alex L. Flamholz; Daniel J. DeMay; Jeffrey A. Leavey; Steve Loh; Sue Chaloux; Alan C. Thomas; Sang Lee; Kenneth J. Giewont; Paul D. Agnello

doi:10.1117/12.309566

5 June 1998 X ray fills the gap

Chet Wasik, G. P. Murphy, Alek C. Chen, Azalia A. Krasnoperova, Alex L. Flamholz, Daniel J. DeMay, Jeffrey A. Leavey, Steve Loh, Sue Chaloux, Alan C. Thomas, Sang Lee, Kenneth J. Giewont, Paul D. Agnello

Author Affiliations +

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309566
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

X-ray lithography has been used in mix and match mode with optical steppers to build test circuits in support of DRAM and Logic development at IBM's Advanced Semiconductor Technology Center, ASTC. Prior to building the test devices, hundreds of wafers were exposed using x-ray lithography to define the etch processes for critical levels and to help separate optical lithography, resist and etching effects. The demand for this type of support required IBM's Advanced Lithography Facility (ALF) to focus on a set of pilot line issues not previously faced by this emerging lithography. The challenges and solutions which resulted are discussed. This paper examines the requirements for the introduction of x-ray into pilot line use based on ALF's most recent experience and performance.

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Chet Wasik, G. P. Murphy, Alek C. Chen, Azalia A. Krasnoperova, Alex L. Flamholz, Daniel J. DeMay, Jeffrey A. Leavey, Steve Loh, Sue Chaloux, Alan C. Thomas, Sang Lee, Kenneth J. Giewont, and Paul D. Agnello "X ray fills the gap", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309566

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