8 June 1998 Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications
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Abstract
The National Institute of Standards and Technology (NIST) is exploring the feasibility of using artifacts fabricated on silicon-on-insulator (SOI) materials to quantify methods divergence, for critical dimension (CD) metrology applications. Test structures, patterned on two types of (110) SOI materials, SIMOX (Separation by IMplantation of OXygen) and BESOI (Bonded-and-Etched-back Silicon-on-Insulator), have been compared. In this paper, we describe results of electrical critical dimension (ECD) measurements and the relative performance of the test structures fabricated on the two SOI materials.
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Richard A. Allen, Richard A. Allen, Rathindra N. Ghoshtagore, Rathindra N. Ghoshtagore, Michael W. Cresswell, Michael W. Cresswell, Loren W. Linholm, Loren W. Linholm, Jeffry J. Sniegowski, Jeffry J. Sniegowski, "Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308722; https://doi.org/10.1117/12.308722
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