8 June 1998 Comparison of recent development models in optical lithography simulation
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Abstract
Popular and recent development models used in optical lithography simulation are examined for the accuracy of their fit to practical data and also the ease with which supplied parameters may be fine-tuned to match the results of a particular photo-cell. It is found that some models are better able to describe the dissolution characteristics than others. No one model is found to be preferred in all cases and the final choice is resist dependent. For example, effects such as the 'notch' found in the R(m) curves of some modern high performance photoresists are best described by new models. In addition, a new method for constructing R(m,z) development rate data files is described and parameters extracted for this purpose show how the characteristics vary as a function of depth into the resist film.
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Graham G. Arthur, Graham G. Arthur, Christine Wallace, Christine Wallace, Brian Martin, Brian Martin, } "Comparison of recent development models in optical lithography simulation", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308765; https://doi.org/10.1117/12.308765
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