Elimination of bottom-pinching effect in environmentally stable chemically amplified resists

Choi Pheng Soo; Ming Hui Fan; Antony J. Bourdillon; Lap Hung Chan

doi:10.1117/12.308790

8 June 1998 Elimination of bottom-pinching effect in environmentally stable chemically amplified resists

Choi Pheng Soo, Ming Hui Fan, Antony J. Bourdillon, Lap Hung Chan

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308790
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Chemically amplified deep UV photoresist is well known with its sensitivity towards base contaminants either from track and stepper ambience or from substrate. The former gives 'T- top' formation whereas the latter leads to 'footing' in line pattern. This sensitivity originates from the chemically amplification nature that uses photoacid to catalyze the deprotection of resin. To overcome environmental unstability, a variety of chemically stable resists have been formulated. However, during evaluation of some of these new deep UV photoresist, 'bottom pinching' (BP) effect was observed for photoresist on top of organic bottom anti-reflection coating (BARC). BP effect is the slimming of photoresist line immediately above the substrate, which shows the photoresist actually dissolutes at a higher rate near the substrate. This might be caused by higher concentration of acid in the photoresist near the substrate. It is believed that the excess amount of acid diffuses out from the BARC layer. Thus, the softbake of BARC and photoresist, the post-exposure bake of photoresist are to be optimized for the 'bottom pinching' effect.

Citation Download Citation

Choi Pheng Soo, Ming Hui Fan, Antony J. Bourdillon, and Lap Hung Chan "Elimination of bottom-pinching effect in environmentally stable chemically amplified resists", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308790

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available