8 June 1998 Fast-etch antireflective coating for sub-0.35-um i-line microlithography applications
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Abstract
We report here the development of a fast-etching i-line bottom anti-reflective coating (BARC): EXP97002B. The new BARC is applied from a safe solvent system, exhibits wide spin bowl compatibility with photoresists, and may be processed with common edge bead removal solvents. The optical density of the new BARC is 6.15/micrometer at 365 nm (n equals 1.71, k equals 0.39). We have demonstrated plasma etch rates for the new coating in excess of 1.5 - 2.0 times that of conventional i- line photoresists. The coating system planarizes substrate topography, reducing resist film thickness variations and, thereby, resist swing. Feature coverage is still excellent, as evidenced by the ability of the new BARC to coat 0.7 micrometer vertical topography. The practical issues for implementing the new BARC in a manufacturing environment is also discussed.
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Paul Williams, Xie Shao, James E. Lamb, Colin Hester, Tony D. Flaim, "Fast-etch antireflective coating for sub-0.35-um i-line microlithography applications", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308762; https://doi.org/10.1117/12.308762
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KEYWORDS
Etching

Photoresist materials

Lithography

Coating

Standards development

Reflectivity

Absorbance

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