8 June 1998 Manufacturability of subwavelength features using reticle and substrate enhancements
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Abstract
This paper uses simulation and experiment to study near resolution limit patterning of contacts and damascene trenches using conventional i-line lithography. Special attention is paid to the requirements for substrate control. The patterning behavior is compared to DUV lithography results. We also evaluate the cost-of-process for an i-line process using substrate and optical enhancements compared to a standard 248 nm DUV process.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin McCallum, Martin McCallum, Kevin D. Lucas, Kevin D. Lucas, John G. Maltabes, John G. Maltabes, Michael E. Kling, Michael E. Kling, "Manufacturability of subwavelength features using reticle and substrate enhancements", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308748; https://doi.org/10.1117/12.308748
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