Nitride film surface properties to reduce nitride residue

Fu-Tien Weng; Chih-Hsiung Lee; Kuo-Liang Lu; Yeong-Pey Chyn

doi:10.1117/12.308782

8 June 1998 Nitride film surface properties to reduce nitride residue

Fu-Tien Weng, Chih-Hsiung Lee, Kuo-Liang Lu, Yeong-Pey Chyn

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308782
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Particles and residues occurred during Nitride (OD) layer process have serious effects on the quality for VLSI manufacturing, especially occurred in Nitride deposition and photo developing process play a main killing role of wafer yield and device function. Using KLA-2132 tool, found many Nitride residues caused field oxide missing result in yield loss. After researching, we found Nitride film surface properties have a great relationship with above residues.

Citation Download Citation

Fu-Tien Weng, Chih-Hsiung Lee, Kuo-Liang Lu, and Yeong-Pey Chyn "Nitride film surface properties to reduce nitride residue", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308782

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