8 June 1998 Optical thin-film decomposition for DUV positive-tone resist process monitoring
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New metrology for characterizing chemically amplified resist is needed in order to meet the stringent demands of the DUV lithographic technologies. In this paper, we present a general model for DUV resist optical constants. In this model, we assume that the photoresist is homogeneous and can be decomposed into several 'components' according to their distinct n and k signatures over a broad range of wavelengths. Each component is described by a Kramers-Kronig based dispersion relation. A global optimization with about 18 parameters is solved for the optical thin-film decomposition, using an intelligent simulated annealing algorithm. Various de-noising techniques that can be used on the collected data are also described.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinhui Niu, Nickhil H. Jakatdar, Costas J. Spanos, Joseph J. Bendik, Ronald P. Kovacs, "Optical thin-film decomposition for DUV positive-tone resist process monitoring", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308750; https://doi.org/10.1117/12.308750

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