8 June 1998 Toward a unified advanced CD-SEM specification for sub-0.18-μm technology
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Abstract
The stringent critical dimension control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope specification in the interests of providing a unified criterion of performance and testing. The specification is grounded on standard definitions and strong principles of metrology. The current revision is to be published as a SEMATECH document. A new revision, now in progress, will embody the consensus of a vendor/user conference.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John A. Allgair, Charles N. Archie, G. William Banke, E. Hal Bogardus, Joseph E. Griffith, Herschel M. Marchman, Michael T. Postek, Lumdas H. Saraf, Jerry E. Schlesinger, Bhanwar Singh, Neal T. Sullivan, Lee E. Trimble, Andras E. Vladar, Arnold W. Yanof, "Toward a unified advanced CD-SEM specification for sub-0.18-μm technology", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308724; https://doi.org/10.1117/12.308724
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KEYWORDS
Semiconducting wafers

Metrology

Pattern recognition

Scanning electron microscopy

Contamination

Calibration

Lithography

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