ArF Materials I
ArF Materials II
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193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids
Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method
Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography
Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group
Control of acidity of the substrate for precise pattern fabrication using a chemically amplified resist