29 June 1998 193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids
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Abstract
Single layer resists for 193 nm based upon resins derived from alternating copolymers of cycloolefins and maleic anhydride will be discussed. Our past work has examined the effect of polymer structure and composition, dissolution inhibitor structure and loading as well as the effect of the photoacid generator on the resist dissolution properties. In this paper, we will report upon on some of our recent investigations aimed at improving performance by use of a new class of photoreactive additives, photogenerators of aminosulfonic acids. One example of these, bis(t- butylphenyl)iodonium cyclamate, will be shown in our high activation 193 nm single layer resist system as being a useful photodecomposable base additive capable of limiting acid diffusion and alleviating post exposure bake delay effects. Finally, we will describe the utility of these materials in low activation energy (acetal based) resist systems.
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Francis M. Houlihan, Janet M. Kometani, Allen G. Timko, Richard S. Hutton, Raymond A. Cirelli, Elsa Reichmanis, Omkaram Nalamasu, Allen H. Gabor, Arturo N. Medina, John J. Biafore, Sydney G. Slater, "193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312462; https://doi.org/10.1117/12.312462
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