Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists

Pushkara Rao Varanasi; Kathleen M. Cornett; Ahmad D. Katnani

doi:10.1117/12.312381

29 June 1998 Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists

Pushkara Rao Varanasi, Kathleen M. Cornett, Ahmad D. Katnani

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312381
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

This paper presents the synthesis, electronic absorption characteristics, thermal stability, acid sensitivity and lithographic potential of (alpha) -methylbenzylether protected poly(hydroxystyrene) derivatives. The results demonstrate the potential of (alpha) -methylbenzylether as an acid labile protecting group in the design of high performance DUV positive tone resist materials.

Citation Download Citation

Pushkara Rao Varanasi, Kathleen M. Cornett, and Ahmad D. Katnani "Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312381

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