29 June 1998 Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists
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Abstract
This paper presents the synthesis, electronic absorption characteristics, thermal stability, acid sensitivity and lithographic potential of (alpha) -methylbenzylether protected poly(hydroxystyrene) derivatives. The results demonstrate the potential of (alpha) -methylbenzylether as an acid labile protecting group in the design of high performance DUV positive tone resist materials.
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Pushkara Rao Varanasi, Kathleen M. Cornett, Ahmad D. Katnani, "Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312381; https://doi.org/10.1117/12.312381
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