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29 June 1998 Application of a bilayer silylated resist process in volume production
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Abstract
Many processes using dry developable silylated resist schemes were developed the last years, however, very few of them made their way into a high volume IC manufacturing line. Frequently the initial euphoria about their excellent lithographic performance was brought down to earth, when typical problems like high defect density, poor linewidth control or difficult stripability were encountered. In this paper we will report on the CARL process and its capability for mass production of DRAMs and logic ICs. We apply this process for the patterning of half-micron features over severe topography with conventional i-line steppers.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Franzen, Andreas Grassmann, Markus Kirschinger, Thorsten Schedel, Harald Wiedenhofer, and Markus Witte "Application of a bilayer silylated resist process in volume production", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312442
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