29 June 1998 Can sub-0.18-μm FEOL be realized in production with KrF DUV?
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Abstract
In this paper, (sub) 0.18 micrometers KrF DUV processes are optimized for logic Front-End-Of-Line (FEOL) CMOS applications. A commercial DUV resist is used without resolution enhancement techniques such as phase-shift masks and off-axis illumination. The full patterning process is considered, i.e., in the final optimized process account is taken of the etch process. Statistical data shows that a stable process was obtained. However, due to minimal process windows at gate level after poly-etch, 0.18 micrometers FEOL cannot be realized in production with KrF DUV.
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Wendy F.J. Gehoel-van Ansem, Wendy F.J. Gehoel-van Ansem, Peter Zandbergen, Peter Zandbergen, Jos de Klerk, Jos de Klerk, } "Can sub-0.18-μm FEOL be realized in production with KrF DUV?", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312420; https://doi.org/10.1117/12.312420
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