Cleaning techniques for low-K dielectric materials for advanced interconnects

Didier Louis; Emile Lajoinie; Douglas Holmes; Shihying Lee; Catherine Peyne

doi:10.1117/12.312372

29 June 1998 Cleaning techniques for low-K dielectric materials for advanced interconnects

Didier Louis, Emile Lajoinie, Douglas Holmes, Shihying Lee, Catherine Peyne

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312372
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The removal of photoresist and etch residues from inter- metal dielectrics using SB-SOM requires new strategies in order for the dielectric constant to remain low during stripping. In this paper we examine two silsesquioxane polymers. The first, HSQ, can be successfully cleaned by implementing a process using H₂/N₂ plasma in conjunction with Posistrip^TM EKC^TM LE, while the second, MSQ, can be cleaned in a unique wet step with EKC325^TM.

Citation Download Citation

Didier Louis, Emile Lajoinie, Douglas Holmes, Shihying Lee, and Catherine Peyne "Cleaning techniques for low-K dielectric materials for advanced interconnects", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312372

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