29 June 1998 Conductive bilevel resist system based on polysilphenylenesiloxane and polyaniline for nanometer lithography
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Abstract
We propose a new bi-level resist system for nanometer lithography based on a polysilphenylenesiloxene resist over a conductive polianiline bottom layer for nanometer lithography. By introducing suitable polar functional groups, the polysilphenylenesiloxane negative electron-beam resist exhibits high sensitivity and high resolution with tetramethylammoniumhydroxide development. The sulfonated polyaniline in the conductive bottom layer can reduce resist charging and width shifts in the oxygen plasma etching. This conductive bi-level resist system can reduce pattern distortion from alignment errors and the proximity effect. The conductive resist system can also reduce the gate oxide leakage or breakdown caused by resist charging during the plasma etching process in MOS-LSI device fabrication. This system shows high pattern accuracy and process reliability, demonstrating its high potential for application in nanometer generation ULSI production.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keiji Watanabe, Miwa Igarashi, Ei Yano, "Conductive bilevel resist system based on polysilphenylenesiloxane and polyaniline for nanometer lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312379; https://doi.org/10.1117/12.312379
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